INTERNATIONAL PATENT: APPLIED MATERIALS, INC. FILES APPLICATION FOR "SELECTIVE ETCHING OF ALTERNATING LAYERS OF SILICON OXIDE AND SILICON NITRIDE FOR HIGH ASPECT RATIO CONTACTS"

GENEVA, Sept. 10 -- APPLIED MATERIALS, INC. (3050 Bowers AvenueSanta Clara, California 95054) filed a patent application (PCT/US2025/016981) for "SELECTIVE ETCHING OF ALTERNATING LAYERS OF SILICON OXIDE AND SILICON NITRIDE FOR HIGH ASPECT RATIO CONTACTS" on Feb 24, 2025. With publication no. WO/2025/184011, the details related to the patent application was published on Sep 04, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SHERPA, Sonam Dorje (3050 Bowers AvenueSanta Clara, California 95054), RANJAN, Alok (3050 Bowers AvenueSanta Clara, California 95054)

Abstract: Exemplary semiconductor...