INTERNATIONAL PATENT: APPLIED MATERIALS, INC. FILES APPLICATION FOR "METHOD OF LOW-TEMPERATURE N-TYPE SELECTIVE SILICON EPITAXY"

GENEVA, Oct. 20 -- APPLIED MATERIALS, INC. (3050 Bowers AvenueSanta Clara, California 95054) filed a patent application (PCT/US2025/019519) for "METHOD OF LOW-TEMPERATURE N-TYPE SELECTIVE SILICON EPITAXY" on Mar 12, 2025. With publication no. WO/2025/216831, the details related to the patent application was published on Oct 16, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HUANG, Yi-Chiau (c/o Applied Materials, Inc., Law Dept., M/S 12693050 Bowers AvenueSanta Clara, California 95054), JEWELL, Jason (c/o Applied Materials, Inc., Law Dept., M/S 12693050 Bowers AvenueSanta Clara, California ...