INTERNATIONAL PATENT: APPLIED MATERIALS, INC. FILES APPLICATION FOR "LOW K INNER SPACER FORMATION BY SELECTIVE PECVD PROCESS IN GATE-ALL-AROUND (GAA) NANOSHEET DEVICE"

GENEVA, Dec. 16 -- APPLIED MATERIALS, INC. (3050 Bowers AvenueSanta Clara, California 95054) filed a patent application (PCT/US2025/030960) for "LOW K INNER SPACER FORMATION BY SELECTIVE PECVD PROCESS IN GATE-ALL-AROUND (GAA) NANOSHEET DEVICE" on May 27, 2025. With publication no. WO/2025/254865, the details related to the patent application was published on Dec 11, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): WANG, Jialiang (755 E Capitol Ave, Apt. M304Milpitas, California 95035), YEONG, Sai Hooi (10618 N Blaney Ave.Cupertino, California 95014), SHARMA, Kashish (c/o Applied Materials, In...