INTERNATIONAL PATENT: APPLIED MATERIALS, INC. FILES APPLICATION FOR "ISOLATION FORMATION METHOD IN HIGH-ASPECT RATIO CMOS STACKED DEVICES"

GENEVA, July 2 -- APPLIED MATERIALS, INC. (3050 Bowers Ave.P.O. Box 58039Santa Clara, California 95054-3299) filed a patent application (PCT/IB2024/062226) for "ISOLATION FORMATION METHOD IN HIGH-ASPECT RATIO CMOS STACKED DEVICES" on Dec 04, 2024. With publication no. WO/2025/133795, the details related to the patent application was published on Jun 26, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): YEONG, Sai Hooi (c/o Think Silicon Research and Technology Single Member S.A.Patras Science Park26504 Rion Achaias), COSTRINI, Gregory (c/o Think Silicon Research and Technology Single Member S....