INTERNATIONAL PATENT: AMS-OSRAM INTERNATIONAL GMBH FILES APPLICATION FOR "METHOD FOR PERFORMING A CHARACTERIZATION OF INTRINSIC STRESSES WITHIN LAYERS OF A SEMICONDUCTOR LAYER STACK"

GENEVA, June 2 -- AMS-OSRAM INTERNATIONAL GMBH (Leibnizstr. 493055 Regensburg) filed a patent application (PCT/EP2023/082745) for "METHOD FOR PERFORMING A CHARACTERIZATION OF INTRINSIC STRESSES WITHIN LAYERS OF A SEMICONDUCTOR LAYER STACK" on Nov 22, 2023. With publication no. WO/2025/108544, the details related to the patent application was published on May 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): RICHTER, Moses (Hermann-Kohl-StraBe 6d93049 Regensburg), YIP, Siew Wah (No. 13, Lorong Cendana 2, Taman Cendana09090 Kulim, Kedah Darul Aman), GEISLER, Hannah (c/o ams-OSRAM Internation...