GENEVA, Aug. 26 -- AIXTRON SE (Dornkaulstr. 252134 Herzogenrath) filed a patent application (PCT/EP2025/053824) for "METHOD AND DEVICE FOR DEPOSITING N-DOPED SIC" on Feb 13, 2025. With publication no. WO/2025/172419, the details related to the patent application was published on Aug 21, 2025.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
Inventor(s): BOOKER, Pitsiri (Bergdriesch 2252062 Aachen)
Abstract:
The invention relates to a method for depositing an SiC layer, wherein an NH3-containing first doping gas flow (D1), a second N2-containing doping gas flow (D2), a C2H4-containing first growth gas flow (Q...