INTERNATIONAL PATENT: AIXTRON SE FILES APPLICATION FOR "DEVICE AND METHOD FOR INDIVIDUALLY INFLUENCING THE LAYER GROWTH OF A LAYER DEPOSITED ON A SUBSTRATE IN A CVD REACTOR RECEIVING A PLURALITY OF SUBSTRATES"

GENEVA, March 24 -- AIXTRON SE (Dornkaulstr. 252134 Herzogenrath) filed a patent application (PCT/EP2024/074988) for "DEVICE AND METHOD FOR INDIVIDUALLY INFLUENCING THE LAYER GROWTH OF A LAYER DEPOSITED ON A SUBSTRATE IN A CVD REACTOR RECEIVING A PLURALITY OF SUBSTRATES" on Sep 06, 2024. With publication no. WO/2025/056433, the details related to the patent application was published on Mar 20, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HOLZWARTH, Jared Lee (Quellenweg 7952074 Aachen)

Abstract: The invention relates to a device and a method for the simultaneous treatment of a pluralit...