New Delhi, June 5 -- In a significant step towards bolstering India's indigenous semiconductor capabilities, RIR Power Electronics Ltd. on Thursday announced the successful expansion of its 1200V Silicon Carbide (SiC) diode production through a strategic collaboration with Taiwan-based Pro Asia Semiconductor Corporation (PASC). The partnership is expected to fast-track RIR's go-to-market strategy by enabling the rollout of SiC devices in various voltage and current ratings, thereby de-risking operations and accelerating the ramp-up of high-efficiency power solutions from RIR's upcoming fabrication facility in Odisha. As part of the initiative, 1200V Schottky Barrier Diodes (SBDs) ranging from 2A to 60A-covering the most widely used configur...