India, June 17 -- Marvell Technology, Inc. (MRVL), a leader in data infrastructure semiconductor solutions, has launched the industry's first 2nm custom Static Random Access Memory - SRAM.
This innovation is designed to enhance the performance of custom XPUs and devices for cloud data centers and AI clusters. The new custom SRAM, which integrates Marvell's advanced circuitry and software with 2nm process technology, delivers up to 6 gigabits of high-speed memory while cutting power consumption and die area significantly at similar densities.
This latest advancement follows Marvell's earlier memory innovations, including CXL technology for adding terabytes of memory to cloud servers and custom HBM technology that boosts memory capacity by ...