Japan Intellectual Property Rights: POWER SEMICONDUCTOR DEVICE HAVING MULTILAYER GATE DIELECTRIC LAYER INCLUDING ETCH STOP/FIELD CONTROL LAYER AND METHOD FOR FORMING SUCH DEVICE

Japan, Nov. 17 -- WOLFSPEED INC has got intellectual property rights for 'POWER SEMICONDUCTOR DEVICE HAVING MULTILAYER GATE DIELECTRIC LAYER INCLUDING ETCH STOP/FIELD CONTROL LAYER AND METHOD FOR FORMING SUCH DEVICE.' Other related details are as follows:

Application Number: JP,2024-187222

Category (FI): H01L29/78,652@K,H01L29/78,658@G,H01L29/78,653@A,H10D30/66,201@A,H10D30/66,102@G,H10D30/66,101@T,H01L29/78,652@T,H10D30/01,301@G

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Oct. 24, 2024

Publication Date: Jan. 9

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

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