Japan Intellectual Property Rights: POWER MOSFET HAVING GATE SOURCE ESD DIODE STRUCTURE

Japan, Jan. 28 -- DIODES INC has got intellectual property rights for 'POWER MOSFET HAVING GATE SOURCE ESD DIODE STRUCTURE.' Other related details are as follows:

Application Number: JP,2024-096060

Category (FI): H01L29/06,301@G,H01L29/06,301@V,H01L29/78,652@N,H01L29/78,652@P,H01L29/78,653@A,H01L29/78,653@B,H01L29/78,657@B,H01L29/78,658@A,H10D30/01,301@A,H10D30/66,103@C,H10D30/66,201@A,H10D30/66,201@B,H10D62/10,101@G,H10D62/10,101@V,H10D84/80,203@B

Stage: Grant (IP right document published.)

Filing Date: June 13, 2024

Publication Date: July 31, 2025

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication....