Japan Intellectual Property Rights: METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

Japan, Nov. 7 -- FUJI ELECTRIC CO LTD has got intellectual property rights for 'METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2021-095367

Category (FI): H01L21/28,301@S,H01L29/78,652@M,H01L29/78,652@T,H01L29/78,653@A,H01L29/78,652@H,H01L29/78,652@J,H01L29/78,652@D,H01L29/78,658@F,H01L29/78,658@A,H01L29/78,658@E,H01L29/78,652@F,H01L21/28,301@B,H10D30/01,301@A,H10D30/01,301@E,H10D30/01,301@F,H10D30/66,101@D,H10D30/66,101@F,H10D30/66,101@H,H10D30/66,101@T,H10D30/66,102@D,H10D30/66,201@A,H10D64/23@M,H10D64/23@Z,H10D64/62@S,H10D64/62@B,H10D30/66,102@S

Stage: Grant (IP right document published.)

Filing Date: June 7, 2021

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