Japan, Jan. 27 -- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,INSTITUTE OF PHYSICAL & CHEMICAL RESEARCH has got intellectual property rights for 'METHOD FOR MANUFACTURING IMPURITY DOPED SEMICONDUCTOR.' Other related details are as follows:
Application Number: JP,2022-066822
Category (FI): H01L21/225@M,H10P32/10@E,H10P32/14@M,H10P34/20,C30B31/22,C30B29/04,C30B29/16,H01L21/26@N,H01L21/22@E
Stage: Grant (IP right granted following substantive examination.)
Filing Date: April 14, 2022
Publication Date: Oct. 26, 2023
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication....