Japan, Oct. 29 -- HITACHI ENERGY LTD has got intellectual property rights for 'METHOD FOR MANUFACTURING IMPROVED SiC SUBSTRATE AND SiC EPILAYER.' Other related details are as follows:
Application Number: JP,2024-090643
Category (FI): H01L21/322@R,H01L21/265@Z,H01L21/20,H01L21/265,602@A,H01L21/322@J
Stage: Grant(IP right document published.)
Filing Date: June 4, 2024
Publication Date: April 9
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
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