Intellectual Property India Publishes Patent Application for 'Stacked-Fet Sram Cell With Bottom Pfet' Filed by International Business Machines Corporation

MUMBAI, India, May 30 -- Intellectual Property India has published a patent application (202517043403 A) filed by International Business Machines Corporation, Armonk, U.S.A., on May 5, for 'stacked-fet sram cell with bottom pfet.'

Inventor(s) include Tsutsui, Gen; Mochizuki, Shogo; and Xie, Ruilong.

The application for the patent was published on May 30, under issue no. 22/2025.

According to the abstract released by the Intellectual Property India: "A semiconductor structure is presented including a bottom field effect transistor (FET) including a plurality of bottom source/drain (S/D) epi regions, a top FET including a plurality of top S/D epi regions, a bonding dielectric layer disposed directly between the bottom FET and the top FET, ...