MUMBAI, India, Oct. 31 -- Intellectual Property India has published a patent application (202517093571 A) filed by Minebea Power Semiconductor Device Inc., Ibaraki, Japan, on Sept. 29, for 'semiconductor device.'
Inventor(s) include Nanjo Hiroyuki; Sakurai Kenji; and Utsumi Tomoyuki.
The application for the patent was published on Oct. 31, under issue no. 44/2025.
According to the abstract released by the Intellectual Property India: "Provided is a semiconductor device which allows cascode connection using a high voltage element having a low gate withstand voltage, thereby increasing the withstand voltage. A semiconductor device (100) is provided with: a first semiconductor element (101); a second semiconductor element (102); a resistor ...