Intellectual Property India Publishes Patent Application for 'Self-Aligned Contact Structures And Methods For Making The Same' Filed by Qualcomm Incorporated

MUMBAI, India, Nov. 7 -- Intellectual Property India has published a patent application (202547095875 A) filed by Qualcomm Incorporated, San Diego, on Oct. 6, for 'self-aligned contact structures and methods for making the same.'

Inventor(s) include Li, Xia; Bao, Junjing; and Zhu, John Jianhong.

The application for the patent was published on Nov. 7, under issue no. 45/2025.

According to the abstract released by the Intellectual Property India: "A self-aligned contact (SAC) and method for making the same is disclosed. In an aspect a field effect transistor (FET) structure comprises a channel connecting a first source or drain (S/D) region to a second S/D region, a gate structure, comprising a multi- layer metal gate between gate spacers,...