Intellectual Property India Publishes Patent Application for 'Rram With Metal-Ferroelectric-Insulator-Metal Stack' Filed by International Business Machines Corporation

MUMBAI, India, Sept. 26 -- Intellectual Property India has published a patent application (202517082444 A) filed by International Business Machines Corporation, Armonk, U.S.A., on Aug. 29, for 'rram with metal-ferroelectric-insulator-metal stack.'

Inventor(s) include Ando, Takashi; Vega, Reinaldo; Lanzillo, Nicholas, Anthony; and Wolpert, David.

The application for the patent was published on Sept. 26, under issue no. 39/2025.

According to the abstract released by the Intellectual Property India: "The disclosed resistance switching memory structure (25) includes a dielectric stack of a ferroelectric layer (10) and a paraelectric layer (15) arranged between a first electrode (5) and a second electrode (20). At least the ferroelectric laye...