Intellectual Property India Publishes Patent Application for 'Row Cell Circuits With Abrupt Diffusion Region Width Transitions' Filed by Qualcomm Incorporated

MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202547068290 A) filed by Qualcomm Incorporated, San Diego, on July 17, for 'row cell circuits with abrupt diffusion region width transitions.'

Inventor(s) include Yang, Haining; Bao, Junjing; Park, Hyunwoo; and Lim, Kwanyong.

The application for the patent was published on July 25, under issue no. 30/2025.

According to the abstract released by the Intellectual Property India: "Logic circuits are implemented in row cell circuits that include diffusion regions. Each diffusion region portion is employed by a transistor in a cell circuit. A current capacity of each transistor depends on a width of the diffusion region portion. A first diffusion region p...