MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202517064603 A) filed by International Business Machines Corporation, Armonk, U.S.A., on July 7, for 'reactive serial resistance reduction for magnetoresistive random-access memory devices.'

Inventor(s) include Gottwald, Matthias Georg; Hu, Guohan; Brown, Stephen; and Reznicek, Alexander.

The application for the patent was published on July 25, under issue no. 30/2025.

According to the abstract released by the Intellectual Property India: "A magnetoresistive device (102) is disclosed that includes a crystalline bottom electrode layer (126) on a semiconductor substrate (104), a crystalline metal layer (124) above the crystalline bottom electrode laye...