Intellectual Property India Publishes Patent Application for 'Power Semiconductor Device And Method For Producing A Power Semiconductor Device' Filed by Hitachi Energy Ltd.

MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202547067745 A) filed by Hitachi Energy Ltd., Zurich, on July 16, for 'power semiconductor device and method for producing a power semiconductor device.'

Inventor(s) include Vemulapati, Umamaheswara; Vobecky, Jan; Wikstroem, Tobias; and Stiasny, Thomas.

The application for the patent was published on July 25, under issue no. 30/2025.

According to the abstract released by the Intellectual Property India: "A power semiconductor device (1) is specified, comprising - a first electrode (2), - a first semiconductor layer (3) of a first conductivity type, - a drift layer (4) of the first conductivity type, - a second semiconductor layer (5) of a second con...