MUMBAI, India, June 27 -- Intellectual Property India has published a patent application (202517053537 A) filed by International Business Machines Corporation, Armonk, U.S.A., on June 2, for 'phase-change memory device with conductive cladding.'

Inventor(s) include Cohen, Guy M.; Cheng, Kangguo; Li, Juntao; Xie, Ruilong; and Frougier, Julien.

The application for the patent was published on June 27, under issue no. 26/2025.

According to the abstract released by the Intellectual Property India: "A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive mate...