MUMBAI, India, March 28 -- Intellectual Property India has published a patent application (202414070065 A) filed by Theion Gmbh, Berlin, on Sept. 17, 2024, for 'mixed ion-electron conductive transition layer induced by the irradiation of chalcogenide based materials.'
Inventor(s) include Kumar, Pushpendra; Slavik, Marek; Puget, Marin; Waidha, Aamir Iqbal; Pehl, Thomas; Martin, Andrea Joris Quentin; and Wutthiprom, Juthaporn.
The application for the patent was published on March 28, under issue no. 13/2025.
According to the abstract released by the Intellectual Property India: "The present invention relates to an electrode and/or cathode stabilized by a transition layer, comprising: (a) a porous chalcogenide-based electrode, more desirabl...