Intellectual Property India Publishes Patent Application for 'Methods And Systems Of Operating A Pnp Bi-Directional Double-Base Bipolar Junction Transistor' Filed by Ideal Power Inc.

MUMBAI, India, May 2 -- Intellectual Property India has published a patent application (202517022742 A) filed by Ideal Power Inc., Austin, U.S.A., on March 13, for 'methods and systems of operating a pnp bi-directional double-base bipolar junction transistor.'

Inventor(s) include Brdar, R. Daniel; Bu, Jiankang; Yu, Ruiyang; and Khanna, Mudit.

The application for the patent was published on May 2, under issue no. 18/2025.

According to the abstract released by the Intellectual Property India: "Operating a PNP double-sided double-base bipolar junction transistor (DSDB BJT). One example is a method of operating a DSDB-BJT, the method comprising: conducting a first load current from an upper terminal of the power module to an upper base of th...