MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202517061579 A) filed by Aixtron Se, Herzogenrath, Germany, on June 27, for 'method for depositing gallium nitride gan on silicon si.'
Inventor(s) include Mauder, Christof; Fahle, Dirk; Booker, Ian Don; and Hahn, Utz Herwig.
The application for the patent was published on July 25, under issue no. 30/2025.
According to the abstract released by the Intellectual Property India: "The invention relates to a method for depositing a layer consisting of elements of main groups III and V on a SiC surface of a substrate made of silicon in a process chamber (2) of a CVD reactor, in which method the SiC surface is generated by means of a first chemical reaction...