MUMBAI, India, May 2 -- Intellectual Property India has published a patent application (202547034372 A) filed by Hitachi Energy Ltd., Zurich, on April 8, for 'manufacturing method for a power semiconductor device and power semiconductor device.'
Inventor(s) include Wirths Stephan; and Knoll Lars.
The application for the patent was published on May 2, under issue no. 18/2025.
According to the abstract released by the Intellectual Property India: "The present disclosure relates to a manufacturing method for a power semiconductor device (1 40) comprising: forming multiple growth templates on a carrier substrate (2) comprising at least a first plurality of hollow growth templates (18) and a second plurality of hollow growth templates (28); s...