Intellectual Property India Publishes Patent Application for 'Field-Effect Transistors (FETS) Employing Thermal Expansion Of Work Function Metal Layers For Strain Effect And Related Fabrication Methods' Filed by Qualcomm Incorporated

MUMBAI, India, Nov. 14 -- Intellectual Property India has published a patent application (202547098530 A) filed by Qualcomm Incorporated, San Diego, on Oct. 13, for 'field-effect transistors (fets) employing thermal expansion of work function metal layers for strain effect and related fabrication methods.'

Inventor(s) include Li, Xia; Yang, Bin; and Yuan, Jun.

The application for the patent was published on Nov. 14, under issue no. 46/2025.

According to the abstract released by the Intellectual Property India: "Forces applied to the channel regions of semiconductor slabs in a first direction relative to the semiconductor slab, can create strains in the crystal structure that improve carrier mobility to improve drive strength in the chann...