MUMBAI, India, Nov. 7 -- Intellectual Property India has published a patent application (202547095993 A) filed by Qualcomm Incorporated, San Diego, on Oct. 6, for 'direct n/p local interconnect.'

Inventor(s) include Bao, Junjing; Yang, Haining; and Lin, Ming-Huei.

The application for the patent was published on Nov. 7, under issue no. 45/2025.

According to the abstract released by the Intellectual Property India: "Disclosed are devices that include a direct N/P local interconnect with minimal recess on shallow trench isolation (STI) oxide. This reduces undesirable coupling capacitance with active gate, which in turn improves AC performance of the device. Full or even partial replacement of STI oxide with low-k dielectric can further redu...