Intellectual Property India Publishes Patent Application for 'Composite Structure Comprising A Monocrystalline Thin Film On A Polycrystalline Silicon Carbide Support Substrate, And Associated Production Method' Filed by Soitec

MUMBAI, India, Nov. 14 -- Intellectual Property India has published a patent application (202547080903 A) filed by Soitec, Bernin, France, on Aug. 26, for 'composite structure comprising a monocrystalline thin film on a polycrystalline silicon carbide support substrate, and associated production method.'

Inventor(s) include Biard, Hugo; Potier, Alexandre; Ferrato, Marc; and Bommier, Christophe.

The application for the patent was published on Nov. 14, under issue no. 46/2025.

According to the abstract released by the Intellectual Property India: "The invention relates to a composite structure for producing microelectronic components, comprising a monocrystalline thin film placed on a polycrystalline silicon carbide support substrate, said...