MUMBAI, India, May 9 -- Intellectual Property India has published a patent application (202547034791 A) filed by Qualcomm Incorporated, San Diego, on April 9, for 'complementary field effect transistor (cfet) with balanced n and p drive current.'
Inventor(s) include Li Xia; Bao Junjing; and Nallapati Giridhar.
The application for the patent was published on May 9, under issue no. 19/2025.
According to the abstract released by the Intellectual Property India: "Disclosed are complementary field effect transistors (CFETs) with balanced n and p drive current and methods for making the same. In an aspect a CFET structure comprises an nFET with horizontal p doped nanosheet channels arranged in a first vertical stack each horizontal p doped nan...