Intellectual Property India Publishes Patent Application for 'Asymmetric Channel Fin-Tfet With Graphene Conduction Path And Gaassb/Gasb Heterojunction For Enhanced Dc And Ac Response.' Filed by CVR College Of Engineering

MUMBAI, India, July 11 -- Intellectual Property India has published a patent application (202541060955 A) filed by CVR College Of Engineering, Hyderabad, Telangana, on June 26, for 'asymmetric channel fin-tfet with graphene conduction path and gaassb/gasb heterojunction for enhanced dc and ac response..'

Inventor(s) include Dr. P. Ramesh.

The application for the patent was published on July 11, under issue no. 28/2025.

According to the abstract released by the Intellectual Property India: "The invention discloses an asymmetric channel Fin-TFET incorporating a graphene conduction path, GaSb source, and GaAsSb drain with a GaAsSb/GaSb heterojunction at the tunneling junction. The device features a tapered, non-uniform channel structure tha...