MUMBAI, India, July 11 -- Intellectual Property India has published a patent application (202521049485 A) filed by Indian Institute Of Technology, Bhilai, Chhattisgarh, on May 22, for 'a system and method for generating lateral strain fields and bandgap modulation in semiconductor nanomembrane.'
Inventor(s) include Anjali Chaudhary; Soumya Tiwari; Tikendra Kumar; and Amit Rana.
The application for the patent was published on July 11, under issue no. 28/2025.
According to the abstract released by the Intellectual Property India: "The present invention relates to a system and method for generating lateral strain fields and bandgap modulation in a thickness modulated semiconductor nanomembrane comprise at least one pressure cell (101), at l...