New Delhi, Feb. 24 -- STMicroelectronics and TSMC are collaborating to accelerate the development of Gallium Nitride (GaN) process technology and the supply of both discrete and integrated GaN devices to market. Through this collaboration, ST's innovative and strategic GaN products will be manufactured using TSMC's leading GaN process technology.

GaN is a wide bandgap semiconductor material that offers significant benefits over traditional Silicon-based semiconductors for power applications. These benefits include greater energy efficiency at higher power, leading to a substantial reduction in parasitic power losses. GaN technology also allows the design of more compact devices for better form factors. Additionally, GaN-based devices swi...