Mumbai, March 28 -- RIR Power Electronics is on track to establish India's First Silicon Carbide (SiC) Semiconductor production facility in Odisha, with the production of Epitaxy Wafer as part of phase 1 production expected to commence by December 2025. This strategic investment of Rs 618 crore to produce high power SiC devices marks a landmark achievement in advancing India's semiconductor industry and strengthening domestic manufacturing capabilities under the Make in India Initiative to produce high power Mosfets and Diodes from 3.3KV to 20KV.

Published by HT Digital Content Services with permission from Capital Market....