ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,428,949, issued on Sept. 30, was assigned to SCHLUMBERGER TECHNOLOGY Corp. (Sugar Land, Texas). "Downhole gyroscope employing a non-contact gy... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,430,725, issued on Sept. 30, was assigned to Adobe Inc. (San Jose, Calif.). "Object class inpainting in digital images utilizing class-specifi... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,429,914, issued on Sept. 30, was assigned to MIANYANG BOE OPTOELECTRONICS TECHNOLOGY Co. LTD. (Sichuan, China) and BOE TECHNOLOGY GROUP Co. LTD... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,132, issued on Sept. 30, was assigned to SAMSUNG DISPLAY Co. LTD. (Yongin-si, South Korea). "Display device" was invented by Hyeonbum Lee ... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,175, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho). "Reactor to form films on sidewalls of memory cells" was i... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,246, issued on Sept. 30, was assigned to Black Duck Software Inc. (Burlington, Mass.). "Iterative generation of hypertext transfer protoco... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,944, issued on Sept. 30, was assigned to CANSEMI TECHNOLOGY INC. (Guangzhou, China). "Semiconductor device structure and method for formin... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,430,715, issued on Sept. 30, was assigned to Outward Inc. (San Jose, Calif.). "Arbitrary view generation" was invented by Clarence Chui (Los A... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,430,638, issued on Sept. 30, was assigned to CIRCLE INTERNET FINANCIAL LLC (Boston). "Securely embedding messages in transaction records in bl... Read More
ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,950, issued on Sept. 30, was assigned to Hitachi Energy Ltd (Zurich, Switzerland). "Insulated gate bipolar transistor including trench Sch... Read More