ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,379, issued on Jan. 27, was assigned to Huawei Technologies Co. LTD. (Shenzhen, China). "Communication method and apparatus for facilitatin... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,666, issued on Jan. 27, was assigned to Samsung Display Co. Ltd. (Yongin-si, South Korea). "Display apparatus and method of manufacturing t... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,201, issued on Jan. 27, was assigned to VIVO MOBILE COMMUNICATION Co. LTD. (Guangdong, China). "Guard period determining method, network no... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,534,791, issued on Jan. 27, was assigned to POSCO (Pohang-si, South Korea), STEEL & CONVERGENCE TECHNOLOGY RESEARCH ASSOCIATION (Pohang-si, Sout... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,536,200, issued on Jan. 27, was assigned to JPMORGAN CHASE BANK N.A. (New York). "System for optimized transmission log storage and retrieval" ... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,640, issued on Jan. 27, was assigned to HAKUSAN INC. (Ishikawa, Japan). "Optical fiber termination structure, optical connection component ... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,536,294, issued on Jan. 27, was assigned to ANSYS INC. (Canonsburg, Pa.). "Security-aware design with placement for power/emag assessment" was ... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,188, issued on Jan. 27, was assigned to CAVAGNA GROUP S.P.A. (Calcinato, Italy). "Protection device for a container for pressurized gas" wa... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,569, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. (Hsin-Chu, Taiwan). "Tuning tensile strain on FinFET" was in... Read More
ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,618, issued on Jan. 27, was assigned to TotalEnergies OneTech (Courbevoie, France). "Method for modelling the formation of a sedimentary ar... Read More