US Patent Issued to Zing Semiconductor, SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES on June 17 for "Measuring method of resistivity of a wafer" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,403, issued on June 17, was assigned to Zing Semiconductor Corp. (Shanghai) and SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES (Shanghai).

"Measuring method of resistivity of a wafer" was invented by Xing Wei (Shanghai), Minghao Li (Shanghai) and Zhongying Xue (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a measuring method of resistivity of a wafer, comprising: choosing a wafer to be measured, conducting a thermal treatment for the wafer to remove a thermal doner in the wafer, conducting an oxidation process for the wafer to form an oxidized surface on the wafer, and measur...