US Patent Issued to ZHEJIANG QIUSHI SEMICONDUCTOR EQUIPMENT, ZHEJIANG JINGSHENG M & E on June 10 for "Epitaxial growth device" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,722, issued on June 10, was assigned to ZHEJIANG QIUSHI SEMICONDUCTOR EQUIPMENT Co. LTD (Hangzhou, China) and ZHEJIANG JINGSHENG M & E Co. LTD (Shaoxing, China).

"Epitaxial growth device" was invented by Liang Zhu (Hangzhou, China), Wenjie Shen (Hangzhou, China), Jiancan Zhou (Hangzhou, China), Jiafeng Cheng (Hangzhou, China), Qiucheng Zhang (Hangzhou, China), Linjian Fu (Hangzhou, China), Jianwei Cao (Hangzhou, China) and Kui Yang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial growth device is provided, which includes an induction coil and a reaction body, and the induction coil is disposed along a circumferential dire...