US Patent Issued to Yangtze Memory Technologies on Feb. 3 for "Semiconductor structure and its fabrication method, memory and memory system" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,313, issued on Feb. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor structure and its fabrication method, memory and memory system" was invented by Yonggang Yang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method of a semiconductor structure includes forming a stack structure and a memory channel structure on a substrate. The memory channel structure penetrates through the stack structure along a stack direction and extends into the substrate to form an extension part. The memory channel structure includes a memory function layer and a channel layer. The method further includes rem...