US Patent Issued to Versum Materials US on Nov. 25 for "Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films" (American, Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,206, issued on Nov. 25, was assigned to Versum Materials US LLC (Tempe, Ariz.).

"Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films" was invented by Xinjian Lei (Vista, Calif.), Ming Li (Tempe, Ariz.), Matthew R. Macdonald (Mission Viejo, Calif.) and Meiliang Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500deg C. is performed using at least one organoaminodisilazane precursor having the following Formula I:wherein R1 and R2 are each independently selected from hydrogen, a linear or branch...