US Patent Issued to VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS on June 17 for "Method for selective metallisation of inorganic dielectrics or semiconductors" (Lithuanian Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,114, issued on June 17, was assigned to VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS (Vilnius, Lithuania).

"Method for selective metallisation of inorganic dielectrics or semiconductors" was invented by Karolis Ratautas (Vilnius, Lithuania), Gediminas Raciukaitis (Vilnius, Lithuania), Aldona Jagminiene (Vilnius, Lithuania), Ina Stankeviciene (Vilnius, Lithuania) and Eugenijus Norkus (Vilnius, Lithuania).

According to the abstract* released by the U.S. Patent & Trademark Office: "This invention describes a process for selectively depositing metal on the surfaces of inorganic dielectric materials such as glass, ceramics, or semiconductor materials...