US Patent Issued to UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA on June 24 for "Three-dimensional carrier stored trench IGBT and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,584, issued on June 24, was assigned to UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (Chengdu, China).

"Three-dimensional carrier stored trench IGBT and manufacturing method thereof" was invented by Jinping Zhang (Chengdu, China), Rongrong Zhu (Chengdu, China), Yuanyuan Tu (Chengdu, China), Zehong Li (Chengdu, China) and Bo Zhang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional carrier stored trench IGBT and a manufacturing method thereof are provided. A P-type buried layer and a split gate electrode with equal potential to an emitter metal is introduced on the basis of the traditional carrier stored tre...