US Patent Issued to University of Electronic Science and Technology of China, Institute of Electronic and Information Engineering of UESTC in Guangdong on Aug. 5 for "Semiconductor device and manufacturing method" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,679, issued on Aug. 5, was assigned to University of Electronic Science and Technology of China (Chengdu, China) and Institute of Electronic and Information Engineering of UESTC in Guangdong (Dongguan, China).

"Semiconductor device and manufacturing method" was invented by Ming Qiao (Chengdu, China), Ruidi Wang (Chengdu, China), Yibing Wang (Chengdu, China), Wenyang Bai (Chengdu, China) and Bo Zhang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modula...