US Patent Issued to United States of America as represented by the Administrator of NASA on Oct. 21 for "Precision fabrication of patterned shapes on silicon wafers with ultra-absorbent black silicon" (Maryland Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,350, issued on Oct. 21, was assigned to United States of America as represented by the Administrator of NASA (Washington).

"Precision fabrication of patterned shapes on silicon wafers with ultra-absorbent black silicon" was invented by Ron Shiri (Glyndon, Md.), Christine Jhabvala (Greenbelt, Md.), William Zhang (Ellicott City, Md.) and Timo Saha (Harwood, Md.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a patterned mask on a silicon wafer includes grind-polishing a pre-cut silicon wafer; ion beam figuring the grind-polished silicon wafer, transferring a coronagraphic pattern to a surface of the ion beam figured silicon wafe...