US Patent Issued to United States of America as represented by the Administrator of NASA on March 18 for "Growth method of highly twinned SiGe alloy on the basal plane of trigonal substrate under electron beam irradiation" (Virginia Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,780, issued on March 18, was assigned to United States of America as represented by the Administrator of NASA (Washington).

"Growth method of highly twinned SiGe alloy on the basal plane of trigonal substrate under electron beam irradiation" was invented by Hyun Jung Kim (Poquoson, Va.), Sang H. Choi (Poquoson, Va.) and Yeonjoon Park (Fairfax, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems that enable growing a SiGe film at relative high temperature resulting in single crystalline properties and imparting twin crystal structures and/or dislocation to the SiGe film through either in-situ or ex-situ electron-beam irradiation. ...