US Patent Issued to ULVAC on Nov. 18 for "Method of depositing silicon nitride film, apparatus for depositing film, and silicon nitride film" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,090, issued on Nov. 18, was assigned to ULVAC INC. (Kanagawa, Japan).

"Method of depositing silicon nitride film, apparatus for depositing film, and silicon nitride film" was invented by Yuta Ando (Kanagawa, Japan), Akira Igari (Kanagawa, Japan) and Naoki Morimoto (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method in which inside a vacuum chamber, a silicon target and a to-be-deposited object are disposed in a positional relationship to face each other; a sputtering gas, containing therein nitrogen gas, is introduced into the vacuum chamber which is in a vacuum atmosphere; a negative potential is applied to the silicon targe...