US Patent Issued to Tokyo Institute of Technology on July 15 for "Method for producing ferroelectric film, ferroelectric film, and usage thereof" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,359,300, issued on July 15, was assigned to Tokyo Institute of Technology (Tokyo).

"Method for producing ferroelectric film, ferroelectric film, and usage thereof" was invented by Hiroshi Funakubo (Tokyo), Takao Shimizu (Tokyo), Takanori Mimura (Tokyo), Yoshiko Nakamura (Tokyo), Reijiro Shimura (Tokyo) and Yu-ki Tashiro (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300deg C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comp...