US Patent Issued to Tokyo Electron on Feb. 3 for "Method of manufacturing magnetoresistive element, oxidation processing apparatus, and substrate processing system" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,505, issued on Feb. 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method of manufacturing magnetoresistive element, oxidation processing apparatus, and substrate processing system" was invented by Kanto Nakamura (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a method of manufacturing a magnetoresistive element. The method comprises: (a) placing a substrate on a substrate support of an oxidation processing apparatus, the substrate having a ferromagnetic layer and a magnesium layer provided on the ferromagnetic layer; and (b) oxidizing the magnesium layer by supplying oxygen gas to the substrate in a state where a...