US Patent Issued to TOHOKU UNIVERSITY, UNIVERSITY OF YAMANASHI on June 24 for "N-type SNS thin film, photoelectric conversion element, solar cell, method for manufacturing n-type SNS thin film, and manufacturing apparatus of n-type SNS thin film" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,655, issued on June 24, was assigned to TOHOKU UNIVERSITY (Sendai, Japan) and UNIVERSITY OF YAMANASHI (Kofu, Japan).

"N-type SNS thin film, photoelectric conversion element, solar cell, method for manufacturing n-type SNS thin film, and manufacturing apparatus of n-type SNS thin film" was invented by Issei Suzuki (Sendai, Japan), Sakiko Kawanishi (Sendai, Japan) and Hiroshi Yanagi (Kofu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "This n-type SnS thin-film has n-type conductivity, an average thickness thereof is 0.100 micro metre to 10 micro metre, a ratio (Alpha1.1/Alpha1.6) of an absorption coefficient Alpha1.1 at a photon energy of 1.1 e...