US Patent Issued to The University of Tokyo, Toshiba Electronic Devices & Storage, Mitsubishi Electric on Nov. 18 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,763, issued on Nov. 18, was assigned to The University of Tokyo (Tokyo), Toshiba Electronic Devices & Storage Corp. (Tokyo) and Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device" was invented by Toshiro Hiramoto (Tokyo), Takuya Saraya (Tokyo), Kiyoshi Takeuchi (Tokyo), Kazuo Itou (Tokyo), Toshihiko Takakura (Tokyo), Munetoshi Fukui (Tokyo), Shinichi Suzuki (Tokyo), Katsumi Satoh (Tokyo) and Tomoko Matsudai (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an emitter layer of a first conductivity type, a collector layer of a first conductivity type, a drift layer of a second conductivity type provided betwee...